International Journal of Application or Innovation in Engineering & Management
An Inspiration for Recent Innovation & Research….
ISSN 2319 – 4847
www.ijaiem.org

Call for Paper, Published Articles, Indexing Infromation Electrical Characterization of Al/n-CdTe/NiCr Schottky Diodes, Authors : Raad M. S. Al-Haddad , Batool.D.Balwa , Suha H.Ibraheem , International Journal of Application or Innovation in Engineering & Management (IJAIEM), www.ijaiem.org
Volume & Issue no: Volume 5, Issue 9, September 2016

Title:
Electrical Characterization of Al/n-CdTe/NiCr Schottky Diodes
Author Name:
Raad M. S. Al-Haddad , Batool.D.Balwa , Suha H.Ibraheem
Abstract:
ABSTRACT Schottky barriers of Al /n-CdTe/ NiCr structures have been prepared and was studied. The films were prepared by thermal evaporation with different thicknesses (400, 600 and 1000) nm at 273Kand annealed at 373K and 473K through 30 min. Schottky barrier characteristics (J-V) and (C-V) have showed that the rectification properties and barrier height increases with the increasing thickness and annealing temperatures, while saturation current density and the ideality factor was decreased. Photovoltaic effect of these junctions was very poor and fill factor relatively low. high defect density, presence of an interfacial layer, low doping concentration are perceived to affect the J–V characteristic. Keywords:- Schottky barrier junction; I-V characteristics; C-V characteristics; Solar cell.
Cite this article:
Raad M. S. Al-Haddad , Batool.D.Balwa , Suha H.Ibraheem , " Electrical Characterization of Al/n-CdTe/NiCr Schottky Diodes " , International Journal of Application or Innovation in Engineering & Management (IJAIEM), Volume 5, Issue 9, September 2016 , pp. 217-226 , ISSN 2319 - 4847.
Full Text [PDF]                          Home